A35H1516M ra35h1516m equivalent, ra35h1516m.
* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
* Low-Power Control Current IGG=1mA (typ) a.
The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG.
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